STOICHIOMETRY AND STRUCTURAL DISORDER EFFECTS ON THE ELECTRONIC-STRUCTURE OF NI AND PD SILICIDES

被引：12

作者：

CHABAL, YJ ^{[1
]}

ROWE, JE ^{[1
]}

POATE, JM ^{[1
]}

FRANCIOSI, A ^{[1
]}

WEAVER, JH ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,STOUGHTON,WI 53589

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.26.2748

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2748 / 2758

页数：11

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