THIN BURIED OXIDE IN IMPLANTED SILICON

Silicon-on-insulator (SOI) is a candidate substrate for future microelectronic devices. At present, the most reliable technology to obtain SOI is oxygen ion implantation (SIMOX); however, due to the implantation time, the material cost is high. A low dose SIMOX, with a thin (50-100 nm) buried layer, can decrease the present cost. The key to obtain low dose SIMOX is the control of oxide precipitation which takes place during ion implantation. A model is formulated to predict distribution and size of oxide precipitates formed during the implantation, and the feasibility of a very thin buried layer, at different depths, is demonstrated.