GAAS MQW MODULATORS INTEGRATED WITH SILICON CMOS

被引：156

作者：

GOOSSEN, KW

WALKER, JA

DASARO, LA

HUI, SP

TSENG, B

LEIBENGUTH, R

KOSSIVES, D

BACON, DD

DAHRINGER, D

CHIROVSKY, LMF

LENTINE, AL

MILLER, DAB

机构：

[1] AT&T BELL LABS,NAPERVILLE,IL 60566

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 04期

关键词：

D O I：

10.1109/68.376802

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate integration of GaAs-AlGaAs multiple quantum well modulators to silicon CMOS circuitry via flip-chip solder-bonding followed by substrate removal. We obtain 95% device yield for 32 x 32 arrays of devices with 15 micron solder pads. We show operation of a simple circuit composed of a modulator and a CMOS transistor.

引用

收藏

页码：360 / 362

页数：3

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