THE ELECTRICAL-ACTIVITY OF OXYGEN IN LEAD-TELLURIDE

被引：0
作者：
LIDORENKO, NS
GASKOV, AM
DASHEVSKII, ZM
RULENKO, MP
机构：
来源：
DOKLADY AKADEMII NAUK SSSR | 1988年 / 301卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
收藏
页码：89 / 91
页数：3
相关论文
共 50 条
[21]   DONOR BEHAVIOR OF GERMANIUM IN LEAD-TELLURIDE [J].
ABAKUMOVA, TA ;
YASHINA, LV ;
TANANAEVA, OI ;
ZLOMANOV, VP .
INORGANIC MATERIALS, 1994, 30 (09) :1039-1040
[22]   INDUCED DEFECTS IN SINTERED LEAD-TELLURIDE [J].
BRESCHI, R ;
OLIVI, A ;
CAMANZI, A ;
FANO, V .
JOURNAL OF MATERIALS SCIENCE, 1980, 15 (04) :918-924
[23]   IMPURITY STATES OF CHROMIUM IN LEAD-TELLURIDE [J].
VULCHEV, VD ;
BORISOVA, LD .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 99 (01) :K53-K56
[24]   STATES OF EU AND MN IN LEAD-TELLURIDE [J].
GROMOVOI, YS ;
DARCHUK, SD ;
KONOVALOV, VN ;
LAKEENKOV, VM ;
PLYATSKO, SV ;
SIZOV, FF .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (06) :639-643
[25]   THE LEAD-TELLURIDE CESIUM IODIDE SYSTEM [J].
BURMISTROVA, NP ;
FITSEVA, RG ;
GOLMGREIN, LA ;
DAVLETSHIN, RY .
INORGANIC MATERIALS, 1980, 16 (10) :1200-1202
[26]   SORE EFFECT STUDY IN LEAD-TELLURIDE [J].
DEDEGKAEV, TT ;
ZHUKOVA, TB ;
YASKOV, DA ;
LAGUKUEV, DK .
FIZIKA TVERDOGO TELA, 1980, 22 (03) :922-924
[27]   ELECTROCHEMICAL-BEHAVIOR OF LEAD-TELLURIDE [J].
DANILOVA, MG ;
SVESHNIKOVA, LL ;
REPINSKII, SM .
SOVIET ELECTROCHEMISTRY, 1987, 23 (01) :44-48
[28]   INVESTIGATION OF ELECTRIC HOMOGENEITY OF LEAD-TELLURIDE [J].
ZHITINSKAYA, MK .
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1985, 28 (09) :27-33
[29]   IMPURITY STATES OF GALLIUM IN LEAD-TELLURIDE [J].
VEIS, AN ;
KAIDANOV, VI ;
KOSTYLEVA, NA ;
MELNIK, RB ;
UKHANOV, YI .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (05) :630-631
[30]   INFLUENCE OF DOPING ON THE ELECTRICAL-RESISTIVITY OF LEAD-TELLURIDE AT HIGH-PRESSURES [J].
SKUMS, VF ;
VALEVSKII, BL ;
PROKOFEVA, LV ;
SKOROPANOV, AS ;
VECHER, AA ;
MASLENKO, YS .
INORGANIC MATERIALS, 1988, 24 (08) :1189-1191
12345