EFFECTS OF SUBSTRATE-SURFACE CLEANING ON SOLID-PHASE EPITAXIAL SI FILMS

[1] FURUKAWA S, 1985, SILICON INSULATOR IT

[2] EPITAXIAL-GROWTH OF SI DEPOSITED ON (100) SI [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 909 - 911

[3] SILICON ON INSULATORS - DIFFERENT APPROACHES - A REVIEW [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 253 - 270

[4] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4241 - 4246

[5] SOLID-PHASE LATERAL EPITAXY OF CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON BY FURNACE ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2847 - 2849

[6] SOLID-PHASE EPITAXY OF CVD AMORPHOUS SI FILM ON CRYSTALLINE SI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (10): : 1431 - 1436

[7] AMORPHOUS-SI CRYSTALLINE-SI FACET FORMATION DURING SI SOLID-PHASE EPITAXY NEAR SI/SIO2 BOUNDARY [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 279 - 285

[8] Malhi S. D. S., 1985, 1985 Symposium on VLSI Technology. Digest of Technical Papers, P36

[9] MATARE HF, 1971, DEFECT ELECT SEMICON, P57

[10] METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN LATERALLY SEEDED EPITAXIAL SI LAYERS ON SIO2 [J]. APPLIED PHYSICS LETTERS, 1982, 41 (01) : 59 - 61

[1] FURUKAWA S, 1985, SILICON INSULATOR IT

[2] EPITAXIAL-GROWTH OF SI DEPOSITED ON (100) SI [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 909 - 911

[3] SILICON ON INSULATORS - DIFFERENT APPROACHES - A REVIEW [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 253 - 270

[4] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4241 - 4246

[5] SOLID-PHASE LATERAL EPITAXY OF CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON BY FURNACE ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2847 - 2849

[6] SOLID-PHASE EPITAXY OF CVD AMORPHOUS SI FILM ON CRYSTALLINE SI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (10): : 1431 - 1436

[7] AMORPHOUS-SI CRYSTALLINE-SI FACET FORMATION DURING SI SOLID-PHASE EPITAXY NEAR SI/SIO2 BOUNDARY [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 279 - 285

[8] Malhi S. D. S., 1985, 1985 Symposium on VLSI Technology. Digest of Technical Papers, P36

[9] MATARE HF, 1971, DEFECT ELECT SEMICON, P57

[10] METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN LATERALLY SEEDED EPITAXIAL SI LAYERS ON SIO2 [J]. APPLIED PHYSICS LETTERS, 1982, 41 (01) : 59 - 61