Effects of glass additions on energy storage performance of (Pb0.97La0.02) (Zr0.92Sn0.05Ti0.03)O-3 antiferroelectric thick films

被引：11
作者：
Chen, Shengchen [1 ]
Yang, Tongqing [1 ]
Wang, Jinfei [1 ]
Yao, Xi [1 ]
机构：
[1] Tongji Univ, Funct Mat Res Lab, Siping Rd 1239, Shanghai 20092, Peoples R China
来源：
JOURNAL OF ADVANCED DIELECTRICS | 2013年 / 3卷 / 02期
基金：
中国国家自然科学基金;
关键词：
Dielectric properties; thick films; microstructure; energy storage;
D O I：
10.1142/S2010135X13500124
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
50 mu m-thick (Pb0.97La0.02)(Zr0.92Sn0.05Ti0.03)O(3)antiferroelectric (AFE) thick films with different amount of 0.8PbO-0.2B(2)O(3) glass additions were fabricated by the screen-printing method on alumina substrate, which was pre-coated with Pt as electrode. The effects of glass additions on dielectric properties and energy storage performance were investigated in details. Due to the enhancement of breakdown strength (BDS) of the specimens by the addition of glass, the energy storage performances of the thick films could be greatly improved. As a result, with 3% glass addition, the BDS of the specimens were as high as 475 kV/cm, the maximum polarization of 34.8 mu C/cm(2) and the maximum recoverable energy storage density of 7.4 J/cm(3) were obtained. The results indicated the (Pb0.97La0.02)(Zr-0.92Sn0.05Ti0.03)O-3 (PLZST) thick films have a promising potential application in capacitors for pulsed power systems.
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页数：5
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