ROOM-TEMPERATURE OPERATION OF INGAASSB/ALGASB DOUBLE HETEROSTRUCTURE LASERS NEAR 2.2 MU-M PREPARED BY MOLECULAR-BEAM EPITAXY

被引：49

作者：

CHIU, TH ^{[1
]}

TSANG, WT ^{[1
]}

DITZENBERGER, JA ^{[1
]}

VANDERZIEL, JP ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 17期

关键词：

D O I：

10.1063/1.97471

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1051 / 1052

页数：2

共 50 条

[21] NEAR ROOM-TEMPERATURE CW OPERATION AT 1.70 MU-M OF MBE GROWN INGAAS-INP DH LASERS
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[28] HGCDTE DOUBLE HETEROSTRUCTURE DIODE-LASERS GROWN BY MOLECULAR-BEAM EPITAXY
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[29] THE RELIABILITY OF (ALGA)AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
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