4-MICRON PERIOD ION-IMPLANTED BUBBLE TEST CIRCUITS

被引：1

作者：

NELSON, TJ ^{[1
]}

FRATELLO, VJ ^{[1
]}

MUEHLNER, DJ ^{[1
]}

ROMAN, BJ ^{[1
]}

SLUSKY, SEG ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1986年 / 22卷 / 02期

关键词：

D O I：

10.1109/TMAG.1986.1064278

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：93 / 100

页数：8

共 50 条

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HU, HL ;

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IEEE TRANSACTIONS ON MAGNETICS, 1975, 11 (05) :1085-1087

[24] Magnetic bubble domain interaction with a charged wall in ion-implanted structures of 4-16 Mbit memory integrated circuits [J].

Bersenev, V.I., 1600, (20)

[25] EFFECTS OF N-H2 DOSES IN ION-IMPLANTED BUBBLE MEMORY TEST CHIPS [J].

NELSON, TJ ;

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REITH, LA ;

ROMAN, BJ ;

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WOLFE, R .

IEEE TRANSACTIONS ON MAGNETICS, 1982, 18 (06) :1358-1360

[26] ROLES OF A HARD BUBBLE SUPPRESSION LAYER IN ION-IMPLANTED BUBBLE-DEVICES [J].

URAI, H ;

MIZUNO, K ;

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IEEE TRANSACTIONS ON MAGNETICS, 1987, 23 (05) :3358-3360

[27] CHANNELING EFFECTS ON BUBBLE PROPAGATION FOR 8-MU-M-PERIOD ION-IMPLANTED PROPAGATION PATTERNS [J].

WEN, WG ;

GUAN, GX ;

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JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :4049-4051

[28] 4MB ON-CHIP-CACHE BUBBLE MEMORY CHIPS WITH 4 MU-M PERIOD ION-IMPLANTED PROPAGATION PATTERNS [J].

URAI, H ;

MIZUNO, K ;

ASADA, S ;

TAKADA, N ;

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YOSHIMI, K .

IEEE TRANSACTIONS ON MAGNETICS, 1984, 20 (05) :1072-1074

[29] MODELING OF TRANSFER GATES IN ION-IMPLANTED BUBBLE-DEVICES [J].

KEEZER, DC ;

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HUMPHREY, FB .

IEEE TRANSACTIONS ON MAGNETICS, 1982, 18 (06) :1361-1363

[30] MAGNETIZATION DISTRIBUTIONS IN ION-IMPLANTED BUBBLE GARNET-FILMS [J].

WILSON, LO ;

NELSON, TJ .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :4163-4167

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