MECHANISM FOR ZINC DIFFUSION IN N-TYPE GALLIUM-ARSENIDE

被引：8
作者：
KAHEN, KB
SPENCE, JP
RAJESWARAN, G
机构：
[1] Corporate Research Laboratories, Eastman Kodak Company, Rochester
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 04期
关键词：
D O I：
10.1063/1.349401
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A model is presented that is able to account successfully for the Zn diffusion profiles in n+-GaAs. The model is based on a previously developed formalism whose basis is the retarding of the interstitial Zn diffusivity because of Coulomb pairing between interstitial and substitutional Zn. By extending the model to include Coulomb pairing of interstitial Zn with all acceptors present during diffusion, the resulting theoretical profiles are shown to be in very good agreement with the data while using only one adjustable parameter.
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页码：2464 / 2466
页数：3
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