PHOTOLUMINESCENCE AND SOLUTION GROWTH OF GALLIUM ARSENIDE

被引:36
作者
PANISH, MB
QUEISSER, HJ
DERICK, L
SUMSKI, S
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D O I
10.1016/0038-1101(66)90060-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:311 / &
相关论文
共 4 条
[1]   RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS [J].
CUSANO, DA .
SOLID STATE COMMUNICATIONS, 1964, 2 (11) :353-358
[2]   INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE [J].
HILL, DE .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A) :A866-&
[3]  
NELSON H, 1963, RCA REV, V24, P603
[4]   THE PREPARATION AND PROPERTIES OF GALLIUM ARSENIDE SINGLE CRYSTALS [J].
WHELAN, JM ;
WHEATLEY, GH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (2-3) :169-&