EFFECT OF HEAT-TREATMENT ON NATURE OF TRAPS IN EPITAXIAL GAAS

被引：29
作者：
HASEGAWA, F [1 ]
MAJERFELD, A [1 ]
机构：
[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,MAPPIN ST,SHEFFIELD S1 3JD,ENGLAND
来源：
ELECTRONICS LETTERS | 1976年 / 12卷 / 02期
关键词：
D O I：
10.1049/el:19760042
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：52 / 53
页数：2
相关论文
共 6 条
[1]   PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].
CHIANG, SY ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2986-2991
[2]   MAJORITY-CARRIER TRAPS IN NORMAL-TYPE AND PARA-TYPE EPITAXIAL GAAS [J].
HASEGAWA, F ;
MAJERFELD, A .
ELECTRONICS LETTERS, 1975, 11 (14) :286-288
[3]  
HASEGAWA F, TO BE PUBLISHED
[4]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[5]  
LANG DV, COMMUNICATION
[6]   STUDY OF ELECTRON TRAPS IN VAPOR-PHASE EPITAXIAL GAAS [J].
MIRCEA, A ;
MITONNEAU, A .
APPLIED PHYSICS, 1975, 8 (01) :15-21
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