EPITAXIAL-GROWTH OF GE FILMS ONTO CAF2-SI STRUCTURES

被引：21

作者：

ASANO, T

ISHIWARA, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 10期

关键词：

D O I：

10.1143/JJAP.21.L630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L630 / L632

页数：3

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[1] AN EPITAXIAL SI/INSULATOR/SI STRUCTURE PREPARED BY VACUUM DEPOSITION OF CAF2 AND SILICON
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[4] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI
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[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 66 - 68
[5] ELECTRICAL PROPERTIES OF EPITAXIAL GE FILMS DEPOSITED ON (111) CAF2 SUBSTRATES
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