EPITAXIAL-GROWTH OF GE FILMS ONTO CAF2-SI STRUCTURES

被引：21

作者：

ASANO, T

ISHIWARA, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 10期

关键词：

D O I：

10.1143/JJAP.21.L630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L630 / L632

页数：3

相关论文

共 5 条

[1] AN EPITAXIAL SI/INSULATOR/SI STRUCTURE PREPARED BY VACUUM DEPOSITION OF CAF2 AND SILICON [J].

ASANO, T ;

ISHIWARA, H .

THIN SOLID FILMS, 1982, 93 (1-2) :143-150

[2] FORMATION OF AN EPITAXIAL SI INSULATOR SI STRUCTURE BY VACUUM DEPOSITION OF CAF2 AND SI [J].

ASANO, T ;

ISHIWARA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :187-191

[3] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS [J].

FARROW, RFC ;

SULLIVAN, PW ;

WILLIAMS, GM ;

JONES, GR ;

CAMERON, DC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :415-420

[4] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI [J].

ISHIWARA, H ;

ASANO, T .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :66-68

[5] ELECTRICAL PROPERTIES OF EPITAXIAL GE FILMS DEPOSITED ON (111) CAF2 SUBSTRATES [J].

SLOOPE, BW ;

TILLER, CO .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) :140-&