DYNAMICS OF ISLAND FORMATION IN THE GROWTH OF INAS/INP QUANTUM-WELLS

被引：28
作者：
RUDRA, A
HOUDRE, R
CARLIN, JF
ILEGEMS, M
机构：
[1] Institute for Micro- and Optoelectronics, Ecole Polytechnique Fédérale de Lausanne
来源：
JOURNAL OF CRYSTAL GROWTH | 1994年 / 136卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(94)90424-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A thin InAs layer grown in a quasi-two-dimensional film over InP reorganizes into islands if left to anneal under arsine. This surface transformation is inhibited at lower arsine fluxes. With increasing temperature, the surface transformation is activated as long as the effective arsine coverage is sufficient.
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页码：278 / 281
页数：4
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