EFFECTS OF SUBSTRATE TEMPERATURES ON THE DOPING PROFILES OF SI IN SELECTIVELY DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION STRUCTURES

被引：53

作者：

INOUE, K ^{[1
]}

SAKAKI, H ^{[1
]}

YOSHINO, J ^{[1
]}

YOSHIOKA, Y ^{[1
]}

机构：

[1] MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 10期

关键词：

D O I：

10.1063/1.95785

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：973 / 975

页数：3

共 12 条

[1] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735

[2] USE OF A SUPER-LATTICE TO ENHANCE THE INTERFACE PROPERTIES BETWEEN 2 BULK HETEROLAYERS [J].

DRUMMOND, TJ ;

KLEM, J ;

ARNOLD, D ;

FISCHER, R ;

THORNE, RE ;

LYONS, WG ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1983, 42 (07) :615-617

[3]

HEIBLUM M, 1984, APPL PHYS LETT, V44, P1064, DOI 10.1063/1.94644

[4]

HEIBLUM M, UNPUB J VAC SCI TECH

[5]

HEIBLUM M, 1984, 3RD INT C MOL BEAM E, P38

[6] A NEW HIGHLY-CONDUCTIVE (ALGA)AS/GAAS/(ALGA)AS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION FIELD-EFFECT TRANSISTOR (SD-DH-FET) [J].

INOUE, K ;

SAKAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02) :L61-L63

[7]

INOUE K, 1984, JPN J APPL PHYS, V23, pL769

[8]

KINOSHITA S, 1984, 3RD INT C MOL BEAM E, P53

[9] IMPROVED GAAS/AIGAAS SINGLE QUANTUM WELLS THROUGH THE USE OF THIN SUPERLATTICE BUFFERS [J].

MASSELINK, WT ;

KLEIN, MV ;

SUN, YL ;

CHANG, YC ;

FISCHER, R ;

DRUMMOND, TJ ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :435-437

[10] CRYSTAL-GROWTH KINETICS IN (GAAS)N-(ALAS)M SUPER-LATTICES DEPOSITED BY MOLECULAR-BEAM EPITAXY .1. GROWTH ON SINGULAR (100)GAAS SUBSTRATES [J].

PETROFF, PM ;

GOSSARD, AC ;

WIEGMANN, W ;

SAVAGE, A .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (01) :5-13

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