DEEP LEVELS IN SEMI-INSULATING LEC GAAS BEFORE AND AFTER SILICON IMPLANTATION

被引：5
作者：
DINDO, S
ABDELMOTALEB, I
LOWE, K
TANG, W
YOUNG, L
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 11期
关键词：
D O I：
10.1149/1.2113646
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2673 / 2677
页数：5
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