DEEP LEVELS IN SEMI-INSULATING LEC GAAS BEFORE AND AFTER SILICON IMPLANTATION

被引：5
作者：
DINDO, S
ABDELMOTALEB, I
LOWE, K
TANG, W
YOUNG, L
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 11期
关键词：
D O I：
10.1149/1.2113646
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2673 / 2677
页数：5
相关论文
共 31 条
[1]  
ALDERSTEIN MG, 1976, ELECTRON LETT, V12, P297
[2]  
ASAI S, 1973, J JAPAN SOC APPL P S, V42, P71
[3]   SOME PROPERTIES OF SEMI-INSULATING AND SI-IMPLANTED GAAS [J].
BHATTACHARYA, PK ;
RHEE, JK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (05) :1152-1159
[4]   RECOIL PROFILES PRODUCED BY ION-IMPLANTATION THROUGH DIELECTRIC LAYERS [J].
BLUNT, RT ;
SWEDA, R ;
SANDERS, IR .
VACUUM, 1984, 34 (1-2) :281-284
[5]  
DILORENZO JV, 1982, GAAS FET PRINCIPLES
[6]  
FAIRMAN RD, 1979, I PHYS C SER, V45, P134
[7]   THE ROLE OF DEFECTS IN THE DIFFUSION AND ACTIVATION OF IMPURITIES IN ION-IMPLANTED SEMICONDUCTORS [J].
FARLEY, CW ;
STREETMAN, BG .
JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (02) :401-436
[8]  
Ghandhi S.K, 1995, VLSI FABRICATION PRI
[9]   TEMPERATURE-DEPENDENCE OF FET PROPERTIES FOR CR-DOPED AND LEC SEMI-INSULATING GAAS SUBSTRATES [J].
HICKMOTT, TW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) :54-62
[10]  
HOUNG YM, 1978, J APPL PHYS, V49, P3248
1234