DOPING OF AMORPHOUS-GERMANIUM BY THE ION-IMPLANTATION METHOD

被引：0
作者：
KHOKHLOV, AF
ERSHOV, AV
MASHIN, AI
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1984年 / 18卷 / 09期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1003 / 1006
页数：4
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