PHOTOLUMINESCENCE OF BISMUTH-DOPED INP

被引：0

作者：

AKCHURIN, RK

BIRYULIN, YF

ISLAMOV, SA

CHALDYSHEV, VV

SHMARTSEV, YV

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1986年 / 20卷 / 07期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：794 / 796

页数：3

共 8 条

[1]

AKCHURIN RK, 1984, ELEKTRON TEKH SER MA, V11, P22

[2]

BAZHENOV VK, 1984, SOV PHYS SEMICOND+, V18, P843

[3] DONOR DISCRIMINATION AND BOUND EXCITON SPECTRA IN INP [J].

DEAN, PJ ;

SKOLNICK, MS .

[4]

Ganina N. V., 1982, Soviet Technical Physics Letters, V8, P270

[5]

GEORGOBIANI AN, 1985, SOV PHYS SEMICOND+, V19, P500

[6]

SOLOVEVA EV, 1984, GROWTH SEMICONDUCT 2, P102

[7] INDIUM-PHOSPHIDE .1. PHOTOLUMINESCENCE MATERIALS STUDY [J].

WILLIAMS, EW ;

ELDER, W ;

ASTLES, MG ;

WEBB, M ;

MULLIN, JB ;

STRAUGHAN, B ;

TUFTON, PJ .

[8]

YAKUSHEVA NA, 1985, IAN SSSR NEORG MATER, V21, P534