CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .1. DEPOSITION FROM SICL2H2 AND ETCHING BY HCL

[1] MASS-SPECTRA OF SILICON CONTAINING INDUSTRIAL GASES [J]. MATERIALS RESEARCH BULLETIN, 1975, 10 (02) : 81 - 83

[2] MASS-SPECTROMETRIC AND THERMODYNAMIC STUDIES OF CVD OF SOME III-V COMPOUNDS [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 19 - &

[3] MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1) [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) : 1473 - &

[4] BAN VS, 1973, J PHYS CHEM SOLIDS, V34, P1119

[5] BENZING WC, 1971, MAY EL SOC M WASH

[6] BLOEM J, 1973, SEMICONDUCTOR SILICO, P180

[7] Ellingham H. J. T., 1944, J SOC CHEM IND LOND, V63, P125, DOI [DOI 10.1002/JCTB.5000630501, 10.1002/jctb.5000630501]

[8] GOLDSMITH N, 1973, RCA REV, V34, P358

[9] THOROUGH THERMODYNAMIC EVALUATION OF SILICON-HYDROGEN-CHLORINE SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) : 1741 - &

[10] HUNT LP, 1970, CHEMICAL VAPOR DEPOS

[1] MASS-SPECTRA OF SILICON CONTAINING INDUSTRIAL GASES [J]. MATERIALS RESEARCH BULLETIN, 1975, 10 (02) : 81 - 83

[2] MASS-SPECTROMETRIC AND THERMODYNAMIC STUDIES OF CVD OF SOME III-V COMPOUNDS [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 19 - &

[3] MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1) [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) : 1473 - &

[4] BAN VS, 1973, J PHYS CHEM SOLIDS, V34, P1119

[5] BENZING WC, 1971, MAY EL SOC M WASH

[6] BLOEM J, 1973, SEMICONDUCTOR SILICO, P180

[7] Ellingham H. J. T., 1944, J SOC CHEM IND LOND, V63, P125, DOI [DOI 10.1002/JCTB.5000630501, 10.1002/jctb.5000630501]

[8] GOLDSMITH N, 1973, RCA REV, V34, P358

[9] THOROUGH THERMODYNAMIC EVALUATION OF SILICON-HYDROGEN-CHLORINE SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) : 1741 - &

[10] HUNT LP, 1970, CHEMICAL VAPOR DEPOS