IRON DIFFUSION FROM PURE FE SUBSTRATE INTO TIN BUFFER LAYERS

被引：23
作者：
GRIGOROV, GI
GRIGOROV, KG
STOJANOVA, M
VIGNES, JL
LANGERON, JP
DENJEAN, P
RANNO, L
机构：
[1] CNRS,CTR ETUD CHIM MET,F-94407 VITRY,FRANCE
[2] UNIV PARIS 07,URA 17,F-75251 PARIS,FRANCE
来源：
PHYSICA C | 1995年 / 241卷 / 3-4期
关键词：
D O I：
10.1016/0921-4534(94)02360-3
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The diffusivity of iron in TiN films has been determined in samples prepared by reactive evaporation of Ti in N-2 atmosphere on silicon substrates followed by evaporation of pure iron. The iron diffusion profiles have been investigated by 2 MeV(4)He(+) Rutherford backscattering spectroscopy (RBS) after annealing at temperatures up to 600 degrees C. The diffusivity from 200 degrees C to 600 degrees C, D[m(2)/s] = 1.4 x 10-(15) exp[ -46/(RT)] is rather high when compared to the diffusivity of other atom species, as for example Si and Al, in TiN films.
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页码：397 / 400
页数：4
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