NUMERICAL-SIMULATION OF THE THERMAL-OXIDATION OF SILICON IN N2O AMBIENT

被引：0
作者：
GADIYAK, GV
KOROBITSINA, JL
机构：
[1] Institute of Computational Technologies Siberian Branch, Russian Academy of Sciences Pr. Ak. Laurentiev 6 Novosibirsk
来源：
SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 05期
关键词：
D O I：
10.1016/0038-1101(95)98685-V
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
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页码：1113 / 1114
页数：2
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