THEORY OF AMORPHOUS MULTILAYER STRUCTURES (SUPERLATTICES)

被引：18

作者：

DOHLER, GH

机构：

[1] Hewlett-Packard Lab, Palo Alto, CA,, USA, Hewlett-Packard Lab, Palo Alto, CA, USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

AMORPHOUS SEMICONDUCTOR SUPERLATTICES - CRYSTALLINE SUPERLATTICES - DOPING-MODULATED SUPERLATTICES;

D O I：

10.1016/0022-3093(85)90838-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

(Edited Abstract)

引用

页码：1041 / 1050

页数：10

共 15 条

[1]

ABELES B, 1983, PHYS REV LETT, V51, P1003

[2] DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE [J].

DINGLE, R ;

GOSSARD, AC ;

WIEGMANN, W .

PHYSICAL REVIEW LETTERS, 1975, 34 (21) :1327-1330

[3]

DOHLER GH, 1982, VERH DTSCH PHYS GES, V17, P745

[4]

DOHLER GH, 1985, PHYSICS CHEM DISORDE, P415

[5]

DOHLER GH, 1984, 17TH P INT C PHYS SE, P491

[6] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].

ESAKI, L ;

TSU, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&

[7] DENSITY-OF-STATES DISTRIBUTION IN THE MOBILITY GAP OF A-SI-H [J].

FRITZSCHE, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :273-280

[8] CARRIER RECOMBINATION TIMES IN AMORPHOUS-SILICON DOPING SUPERLATTICES [J].

HUNDHAUSEN, M ;

LEY, L ;

CARIUS, R .

PHYSICAL REVIEW LETTERS, 1984, 53 (16) :1598-1601

[9] PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SILICON SUPERLATTICES [J].

HUNDHAUSEN, M ;

LEY, L .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :1051-1060

[10] PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SEMICONDUCTORS [J].

KAKALIOS, J ;

FRITZSCHE, H .

PHYSICAL REVIEW LETTERS, 1984, 53 (16) :1602-1605

← 1 2 →