RESOLUTION CHARACTERISTICS OF A NOVEL SILICONE-BASED POSITIVE PHOTORESIST

被引：7
|
作者：
TANAKA, A
BAN, H
IMAMURA, S
ONOSE, K
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 03期
关键词：
D O I：
10.1116/1.584788
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：572 / 575
页数：4
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