MORPHOLOGY AND DISTRIBUTION OF ATOMIC STEPS ON SI(001) STUDIED WITH SCANNING TUNNELING MICROSCOPY

被引：42

作者：

DIJKKAMP, D

HOEVEN, AJ

VANLOENEN, EJ

LENSSINCK, JM

DIELEMAN, J

机构：

[1] Philips Research Laboratories, 5600 JA Eindhoven

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 01期

关键词：

D O I：

10.1063/1.102640

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the morphology and distribution of atomic steps on Si(001) with scanning tunneling microscopy. We find that native oxide removal at temperatures up to 1350 K leads to step pinning and bunching. Cleaning at temperatures above 1450 K leads to regular step distributions which reflect the macroscopic misorientation of the sample. Steps running parallel to the 2×1 dimer rows on the upper terrace are straight, whereas steps perpendicular to these rows are ragged.

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页码：39 / 41

页数：3

相关论文

共 17 条

[1] NATURE OF VICINAL LASER-ANNEALED SI(111) SURFACES [J].

CHABAL, YJ ;

ROWE, JE ;

CHRISTMAN, SB .

PHYSICAL REVIEW B, 1981, 24 (06) :3303-3309

[2] STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1691-1694

[3] A SIMPLIFIED SCANNING TUNNELING MICROSCOPE FOR SURFACE SCIENCE STUDIES [J].

DEMUTH, JE ;

HAMERS, RJ ;

TROMP, RM ;

WELLAND, ME .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1320-1323

[4] SCANNING TUNNELING MICROSCOPY OF SI(001) [J].

HAMERS, RJ ;

TROMP, RM ;

DEMUTH, JE .

PHYSICAL REVIEW B, 1986, 34 (08) :5343-5357

[5] A SCANNING TUNNELING MICROSCOPE STUDY OF THE SI(110) SURFACE [J].

HOEVEN, AJ ;

DIJKKAMP, D ;

VANLOENEN, EJ ;

VANHOOFT, PJGM .

SURFACE SCIENCE, 1989, 211 (1-3) :165-172

[6] LOW-ENERGY ELECTRON-DIFFRACTION INVESTIGATIONS OF SI MOLECULAR-BEAM EPITAXY ONTO SI(100) [J].

HORN, M ;

GOTTER, U ;

HENZLER, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :727-730

[7] UHV-REM STUDY OF CHANGES IN THE STEP STRUCTURES ON CLEAN (100) SILICON SURFACES BY ANNEALING [J].

INOUE, N ;

TANISHIRO, Y ;

YAGI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (04) :L293-L295

[8] UHV-SEM OBSERVATIONS OF CLEANING PROCESS AND STEP FORMATION ON SILICON (111) SURFACES BY ANNEALING [J].

ISHIKAWA, Y ;

IKEDA, N ;

KENMOCHI, M ;

ICHINOKAWA, T .

SURFACE SCIENCE, 1985, 159 (01) :256-264

[9] SOME ASPECTS OF SURFACE BEHAVIOR OF SILICON [J].

JOYCE, BA .

SURFACE SCIENCE, 1973, 35 (01) :1-7

[10] STRUCTURE, STABILITY, AND ORIGIN OF (2 X N) PHASES ON SI(100) [J].

MARTIN, JA ;

SAVAGE, DE ;

MORITZ, W ;

LAGALLY, MG .

PHYSICAL REVIEW LETTERS, 1986, 56 (18) :1936-1939