MECHANISM OF FERMI-LEVEL STABILIZATION IN SEMICONDUCTORS

被引：145
作者：
WALUKIEWICZ, W
机构：
来源：
PHYSICAL REVIEW B | 1988年 / 37卷 / 09期
关键词：
D O I：
10.1103/PhysRevB.37.4760
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：4760 / 4763
页数：4
相关论文
共 28 条
[1]  
AKIMCHENKO IP, 1979, SOV PHYS SEMICOND+, V13, P1292
[2]   ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1985, 55 (12) :1327-1330
[3]   BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1986, 33 (10) :7346-7348
[4]  
BARDEEN J, 1947, PHYS REV, V71, P777
[5]  
BRUDNYI VN, 1985, SOV PHYS SEMICOND+, V19, P460
[6]  
BRUDNYI VN, 1982, SOV PHYS SEMICOND+, V16, P21
[7]  
BRUDNYI VN, 1986, SOV PHYS SEMICOND+, V20, P320
[8]   ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J].
CARDONA, M ;
CHRISTENSEN, NE .
PHYSICAL REVIEW B, 1987, 35 (12) :6182-6194
[9]   FAST-NEUTRON BOMBARDMENT OF GASB [J].
CLELAND, JW ;
CRAWFORD, JH .
PHYSICAL REVIEW, 1955, 100 (06) :1614-1618
[10]   SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J].
FREEOUF, JL ;
WOODALL, JM .
APPLIED PHYSICS LETTERS, 1981, 39 (09) :727-729
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