EVALUATION OF THE FABRICATION OF PRESSURE SENSORS USING BULK MICROMACHINING BEFORE IC PROCESSING

被引：3
作者：
DESAMBER, MA
HOTRAN, TPL
机构：
[1] Philips Research Laboratories Eindhoven, Eindhoven
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1995年 / 46卷 / 1-3期
关键词：
MICROMACHINING; PIEZORESISTIVE PRESSURE SENSORS; POLYSILICON PRESSURE SENSORS; PRESSURE SENSORS; SILICON DIRECT BONDING; SILICON FUSION BONDING;
D O I：
10.1016/0924-4247(94)00879-M
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Polysilicon piezoresistive pressure sensors were fabricated in a standard IC fab, using micromachined, direct bonded silicon wafers. A standard IC process was used, and no compatibility problems were observed. Pressure sensors with excellent characteristics were obtained. Temperature coefficients of resistivity and offset (TCR and TCO) of respectively 0.084 +/- 0.004% K-1 and 0.006+/-0.001% K-1 were measured. The technology used gives the possibility to optimize sensitivity, overpressure protection and pressure range, even at the same time.
引用
收藏
页码：147 / 150
页数：4
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