ROCKING-CURVE ANALYSIS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION FROM THE SI(111)-(ROOT-3X-ROOT-3)R30-DEGREES-AL, SI(111)-(ROOT-3X-ROOT-3)R30-DEGREES-GA, AND SI(111)-(ROOT-3X-ROOT-3)R30-DEGREES-IN SURFACE

被引：62

作者：

HANADA, T ^{[1
]}

DAIMON, H ^{[1
]}

INO, S ^{[1
]}

机构：

[1] UNIV TOKYO,GRAD SCH SCI,DEPT PHYS,TOKYO 113,JAPAN

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.51.13320

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Rocking curves of reflection high-energy electron diffraction (RHEED) have been measured from the Si(111)-(3 × 3) R30°-Al, -Ga, and -In surfaces at [21 1] incidence. Dynamical calculations of RHEED intensities and reliability-factor minimization have been carried out to obtain optimal surface structures for the three surfaces. Three high-symmetry sites were examined for every adsorbate atom assuming coverage of 1/3 ML. Among these, the fourfold-coordinated terminal-site (T4) model is in good agreement with the experiment if substrate rumpling is considered. In the RHEED method, coordinates of the surface atoms are obtained with accuracy bettter than about 0.1. © 1995 The American Physical Society.

引用

页码：13320 / 13325

页数：6

共 27 条

[1] VIBRATIONAL AMPLITUDES IN GERMANIUM AND SILICON [J].