QUANTITATIVE-ANALYSIS OF STRAIN RELAXATION IN GEXSI1-X/SI(110) HETEROSTRUCTURES AND AN ACCURATE DETERMINATION OF STACKING-FAULT ENERGY IN GEXSI1-X ALLOYS

被引：44
作者：
HULL, R
BEAN, JC
PETICOLAS, LJ
BAHNCK, D
WEIR, BE
FELDMAN, LC
机构：
[1] AT and T Bell Laboratories, Murray Hill
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 23期
关键词：
D O I：
10.1063/1.108068
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a quantitative theoretical and experimental analysis of strain relaxation in GexSi1-x/Si(110) heterostructures. It is shown that above a critical composition, the critical thickness for edge a/6(112) Shockley partial dislocations is less than that for 60-degrees a/2 [110] total dislocations. The net (excess) stress is greater on the edge a/6[112] dislocations for epilayer thicknesses, h<h(x), but greater on the 60-degrees a/2[110] dislocations for h > h(x). The sensitive calculated dependence of h(x) upon the stacking fault energy per unit area gamma allows an experimental determination of gamma = 65 +/- 10 mJ m-2 for x is similar to 0.3 in GexSi1-x.
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页码：2802 / 2804
页数：3
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