NUMERICAL-SIMULATION OF SIGE HBTS AT CRYOGENIC TEMPERATURES

被引：13
|
作者：
RICHEY, DM
CRESSLER, JD
JAEGER, RC
机构：
来源：
JOURNAL DE PHYSIQUE IV | 1994年 / 4卷 / C6期
关键词：
D O I：
10.1051/jp4:1994620
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
This paper describes SCORPIO, a new one-dimensional, drift-diffusion simulator for modeling silicon-germanium heterojunction bipolar transistors (SiGe HBT's) over a wide temperature range (77-400K). SCORPIO will be used to investigate fundamental low-temperature device physics problems and key device design issues. Comparisons of simulation results with experimental measurements are being used to ensure accurate model calibration.
引用
收藏
页码：127 / 132
页数：6
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