LIGHT-EMITTING NANOCRYSTALLINE SILICON PREPARED BY DRY PROCESSING - THE EFFECT OF CRYSTALLITE SIZE

被引：91

作者：

RUCKSCHLOSS, M ^{[1
]}

LANDKAMMER, B ^{[1
]}

VEPREK, S ^{[1
]}

机构：

[1] TECH UNIV MUNICH,INST CHEM INFORMAT RECORDING,LICHTENBERGSTR 4,D-85747 GARCHING,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 11期

关键词：

D O I：

10.1063/1.109660

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new technique for the preparation of light emitting nanocrystalline (nc) silicon by a combination of plasma chemical vapor deposition and post-treatment consisting of oxidation and annealing in forming gas is reported. The advantage of this processing consists in the possibility of a control of the crystallite size and the fraction of nc-Si in the film. A strong increase of the photoluminescence below 35 angstrom, as predicted by theory, is documented experimentally.

引用

页码：1474 / 1476

页数：3

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