ELECTRICAL-PROPERTIES OF POLYIMIDE ON N-GAAS (100) INTERFACES BY A PULSED LASER EVAPORATION TECHNIQUE

被引：2
|
作者：
CHAUDHARI, GN [1 ]
RAO, VJ [1 ]
机构：
[1] INDIAN INST CHEM TECHNOL,DIV PHYS & INORGAN CHEM,MAT SCI GRP,HYDERABAD 500007,INDIA
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1993年 / 56卷 / 04期
关键词：
D O I：
10.1007/BF00324355
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Incorporation of a thin insulating layer of polymer-like polyimide deposited by pulsed laser evaporation technique between metal and n-GaAs has resulted in diode structures with MIS and Schottky-barrier-type capacitance-voltage and current-voltage characteristics. These structures have the potential to be useful in improving the performance of GaAs FETs for microwave and high-speed applications.
引用
收藏
页码：353 / 354
页数：2
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