ELECTRICAL-PROPERTIES OF POLYIMIDE ON N-GAAS (100) INTERFACES BY A PULSED LASER EVAPORATION TECHNIQUE

被引：2

作者：

CHAUDHARI, GN ^{[1
]}

RAO, VJ ^{[1
]}

机构：

[1] INDIAN INST CHEM TECHNOL,DIV PHYS & INORGAN CHEM,MAT SCI GRP,HYDERABAD 500007,INDIA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1993年 / 56卷 / 04期

关键词：

D O I：

10.1007/BF00324355

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Incorporation of a thin insulating layer of polymer-like polyimide deposited by pulsed laser evaporation technique between metal and n-GaAs has resulted in diode structures with MIS and Schottky-barrier-type capacitance-voltage and current-voltage characteristics. These structures have the potential to be useful in improving the performance of GaAs FETs for microwave and high-speed applications.

引用

页码：353 / 354

页数：2

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