PHOTOCARRIER DYNAMICS IN COMPENSATED HYDROGENATED AMORPHOUS-SILICON

被引：8

作者：

THOMSEN, C

STODDART, H

ZHOU, T

TAUC, J

VARDENY, Z

机构：

[1] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912

[2] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,HAIFA,ISRAEL

[3] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,HAIFA,ISRAEL

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.33.4396

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4396 / 4398

页数：3

共 13 条

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[3]

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TAUC, J .

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[5]

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[6] LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON OBSERVED BY PICOSECOND PHOTOINDUCED ABSORPTION [J].

STRAIT, J ;

TAUC, J .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :589-591

[7] DOPING AND THE FERMI ENERGY IN AMORPHOUS-SILICON [J].

STREET, RA .

PHYSICAL REVIEW LETTERS, 1982, 49 (16) :1187-1190

[8] DEFECT STATES IN DOPED AND COMPENSATED A-SI-H [J].

STREET, RA ;

BIEGELSEN, DK ;

KNIGHTS, JC .

PHYSICAL REVIEW B, 1981, 24 (02) :969-984

[9] LOCALIZED STATES IN DOPED AMORPHOUS-SILICON [J].

STREET, RA .

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[10]

STUTZMANN M, 1985, J NONCRYST SOLIDS, V77, P1

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