THE FLUX GROWTH OF SINGLE-CRYSTALS OF VANADIUM-DOPED ZRSIO4, HFSIO4, ZRGEO4 AND HFGEO4 AS WELL AS OF CHROMIUM-DOPED ZRSIO4 AND TERBIUM-DOPED ZRGEO4

被引：10

作者：

CHANDLEY, P

CLARK, RJH

机构：

[1] Christopher Ingold Laboratories, University College London, London, WC1H 0AJ

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 116卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(92)90124-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Flux compositions based on an Na2CO3/MoO3 flux and firing conditions were determined for the growth of single crystals of vanadium-doped ZrSiO4, HfSiO4, ZrGeO4 and HfGeO4 as well as chromium-doped ZrSiO4 and terbium-doped ZrGeO4. It was found that the vanadium concentration in the crystals of ZrGeO4 could be controlled by varying the V2O5:Na2CO3 ratio. Crystallisation of ZrGeO4 and HfGeO4 was very dependent on the GeO2: Na2CO3 ratio. The compositions of the crystals grown were determined by electron probe analysis.

引用

页码：151 / 157

页数：7

共 12 条

[1] COLORED SYNTHETIC ZIRCON CRYSTALS - FLUX GROWTH AND EPR OF V4+ IMPURITY CENTERS [J].