OPTOELECTRONIC PROPERTIES OF CD1-XZNXTE FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES

被引:164
作者
OLEGO, DJ [1 ]
FAURIE, JP [1 ]
SIVANANTHAN, S [1 ]
RACCAH, PM [1 ]
机构
[1] UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680
关键词
D O I
10.1063/1.96316
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:1172 / 1174
页数:3
相关论文
共 7 条
[1]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY HGTE AND HG1-XCDXTE ONTO GAAS (001) SUBSTRATES [J].
FAURIE, JP ;
SIVANANTHAN, S ;
BOUKERCHE, M ;
RENO, J .
APPLIED PHYSICS LETTERS, 1984, 45 (12) :1307-1309
[2]   A PHOTOLUMINESCENCE STUDY OF MOLECULAR-BEAM EPITAXY GROWN CDTE-FILMS ON (001) INSB SUBSTRATES [J].
FENG, ZC ;
MASCARENHAS, A ;
CHOYKE, WJ ;
FARROW, RFC ;
SHIRLAND, FA ;
TAKEI, WJ .
APPLIED PHYSICS LETTERS, 1985, 47 (01) :24-25
[3]   PHOTOLUMINESCENCE OF CDTE - A COMPARISON OF BULK AND EPITAXIAL MATERIAL [J].
GILESTAYLOR, NC ;
BICKNELL, RN ;
BLANKS, DK ;
MYERS, TH ;
SCHETZINA, JF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :76-82
[4]   EXAFS OF CD1-XZNXTE - A TEST OF THE RANDOM DISTRIBUTION IN ZINCBLENDE TERNARY ALLOYS [J].
MOTTA, N ;
BALZAROTTI, A ;
LETARDI, P ;
KISIEL, A ;
CZYZYK, MT ;
ZIMNALSTARNAWSKA, M ;
PODGORNY, M .
SOLID STATE COMMUNICATIONS, 1985, 53 (06) :509-512
[5]   ALLOY BROADENING IN PHOTOLUMINESCENCE SPECTRA OF ALXGA1-XAS [J].
SCHUBERT, EF ;
GOBEL, EO ;
HORIKOSHI, Y ;
PLOOG, K ;
QUEISSER, HJ .
PHYSICAL REVIEW B, 1984, 30 (02) :813-820
[6]  
THOMAS GA, 1980, HDB SEMICONDUCTORS, V2, P45
[7]   ELECTRONIC STRUCTURES OF SEMICONDUCTOR ALLOYS [J].
VANVECHTEN, JA ;
BERGSTRESSER, TK .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (08) :3351-+