PHASE-TRANSITION ON THE SI(111) SURFACE - A 1ST-ORDER PHASE-TRANSITION UNDER STRAIN

被引：10
|
作者：
CHEVRIER, J
VINH, LT
CRUZ, A
机构：
[1] UNIV AIX MARSEILLE 3,CTR RECH MECAN CROISSANCE CRISTALLINE,F-13288 MARSEILLE 09,FRANCE
[2] CNRS,F-13288 MARSEILLE 9,FRANCE
来源：
SURFACE SCIENCE | 1992年 / 268卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(92)90932-V
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Experimental results from reflection high energy electron diffraction on the 7 x 7 <--> 1 x 1 phase transition at the (111) surface of silicon are presented. These results are consistent with a first order phase transition but with an important width in temperature. We develop simple arguments to show that a strain field applied by the volume on the surface can explain this broadening and also the phase coexistence.
引用
收藏
页码：L261 / L266
页数：6
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