QUASI-BALLISTIC CORRECTIONS TO BASE TRANSIT-TIME IN BIPOLAR-TRANSISTORS

被引：10
|
作者：
HERBERT, DC
机构：
[1] R. Signals and Radar Establ., Malvern
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 05期
关键词：
D O I：
10.1088/0268-1242/6/5/017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple analytic expression is derived for the base transit time of a bipolar transistor that allows for ballistic corrections. Differences with published Monte Carlo results suggest that the standard use of an absorbing boundary at the base-emitter junction in the Monte Carlo method requires closer examination.
引用
收藏
页码：405 / 407
页数：3
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