DIELECTRIC-BREAKDOWN IN MOS DEVICES .3. THE DAMAGE LEADING TO BREAKDOWN

被引：0

作者：

WOLTERS, DR

VANDERSCHOOT, JJ

机构：

[1] Philips Research Lab, Eindhoven, Neth, Philips Research Lab, Eindhoven, Neth

来源：

PHILIPS JOURNAL OF RESEARCH | 1985年 / 40卷 / 03期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：164 / 192

页数：29

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