MIXING AND CHEMICAL EFFECTS IN SIMS DEPTH PROFILING THE SI/SIO2 INTERFACE

被引：8

作者：

ANDERLE, M ^{[1
]}

LOXTON, CM ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 15卷 / 1-6期

关键词：

D O I：

10.1016/0168-583X(86)90281-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：186 / 188

页数：3

共 14 条

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[5]

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) :49-53

[7] TEMPERATURE EFFECTS IN ATOMIC MIXING OF METAL SILICON MULTILAYERS MEASURED BY SIMS [J].

KING, BV ;

TONN, DG ;

TSONG, IST .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :607-615

[8]

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[9] MASS REDISTRIBUTION BY ATOMIC MIXING IN SPUTTER DEPTH PROFILING [J].

MATTESON, S .

APPLIED SURFACE SCIENCE, 1981, 9 (1-4) :335-344

[10] ION-BEAM-INDUCED ATOMIC MIXING AT THE SIO2-SI INTERFACE [J].

TSONG, IST ;

MONKOWSKI, JR ;

HOFFMAN, DW .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :237-240

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