INSITU INVESTIGATION OF THE LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF LATTICE-MISMATCHED SEMICONDUCTORS USING REFLECTANCE ANISOTROPY MEASUREMENTS

被引：43

作者：

ACHER, O ^{[1
]}

KOCH, SM ^{[1
]}

OMNES, F ^{[1
]}

DEFOUR, M ^{[1
]}

RAZEGHI, M ^{[1
]}

DREVILLON, B ^{[1
]}

机构：

[1] ECOLE POLYTECH,LPICM,F-91128 PALAISEAU,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 07期

关键词：

D O I：

10.1063/1.346316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of InAs on InP and InP on GaAs is investigated using reflectance anisotropy (RA) measurements. Very large optical anisotropies are observed, related to the three-dimensional growth mode of these materials. A model is proposed to account for the optical properties of the samples, using effective medium theories to describe the roughness. Good quantitative agreement is obtained for small roughness thickness, and a qualitative description is found for larger roughness features. The RA technique is found to be very useful to monitor the growth of lattice-mismatched materials, particularly at the nucleation stage.

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页码：3564 / 3577

页数：14

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