MEMORY AND LOGIC-CIRCUITS USING SEMICONDUCTOR-BARRIER JOSEPHSON JUNCTIONS

被引：6

作者：

LUM, WY

CHAN, HW

VANDUZER, T

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1977年 / 13卷 / 01期

关键词：

D O I：

10.1109/TMAG.1977.1059430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：48 / 51

页数：4

相关论文

共 12 条

[1] CHARACTERISTICS OF IN-LINE JOSEPHSON TUNNELING GATES
BASAVAIAH, S
BROOM, RF
[J]. IEEE TRANSACTIONS ON MAGNETICS, 1975, MA11 (02) : 759 - 762
[2] CHAN HM, TO BE PUBLISHED
[3] HIGH-SPEED SWITCHING AND LOGIC CIRCUITS USING JOSEPHSON DEVICES
CHAN, HW
LUM, WY
VANDUZER, T
[J]. IEEE TRANSACTIONS ON MAGNETICS, 1975, MA11 (02) : 770 - 773
[4] ENERGY-STORAGE AND SUBHARMONIC OSCILLATIONS IN JOSEPHSON JUNCTIONS
DEMPSEY, DG
LEVINSEN, MT
ULRICH, BT
[J]. IEEE TRANSACTIONS ON MAGNETICS, 1975, MA11 (02) : 811 - 814
[5] GUERET PL, 1975, Patent No. 3891864
[6] ELEMENTARY LOGIC CIRCUIT EMPLOYING SUPERCONDUCTING JOSEPHSON TUNNELING GATES
HENKELS, WH
[J]. IEEE TRANSACTIONS ON MAGNETICS, 1974, MA10 (03) : 860 - 863
[7] LUM WY, TO BE PUBLISHED
[8] LUM WY, 1975, THESIS U CALIF
[9] TUNNELING CRYOTRON - A SUPERCONDUCTIVE LOGIC ELEMENT BASED ON ELECTRON TUNNELING
MATISOO, J
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (02): : 172 - &
[10] SETO J, 1972, THESIS U CALIF