PHOTOVOLTAIC PROPERTIES OF NORMAL-CDSE/PARA-ZNTE HETEROJUNCTIONS

被引：24

作者：

BUCH, F ^{[1
]}

FAHRENBRUCH, AL ^{[1
]}

BUBE, RH ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 10期

关键词：

D O I：

10.1063/1.88576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：593 / 595

页数：3

共 13 条

[1]

Arnold H., 1970, Physica Status Solidi A, V1, pk5, DOI 10.1002/pssa.19700010124

[2] ZNTE-CDSE HETEROJUNCTIONS .1. ELECTRICAL PROPERTIES [J].

GASHIN, PA ;

SIMASHKE.AV .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 19 (01) :379-386

[3] ZNTE-CDSE HETEROJUNCTIONS .2. PHOTOELECTRIC AND LUMINESCENT PROPERTIES [J].

GASHIN, PA ;

SIMASHKEVICH, AV .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 19 (02) :615-623

[4] THE USE OF CLOSE SPACING IN CHEMICAL-TRANSPORT SYSTEMS FOR GROWING EPITAXIAL LAYERS OF SEMICONDUCTORS [J].

NICOLL, FH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (11) :1165-1167

[5] THERMODYNAMIC MODEL AND EPITAXIAL-GROWTH OF CDSE LAYERS [J].

RATCHEVA.TM ;

KRASULIN, GA ;

TCHISTYAKOV, YD ;

DRAGIEVA, ID ;

DJOGLEV, DH .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 22 (02) :593-597

[6] PREPARATION OF CDSE EPITAXIAL LAYERS BY VAPOR TRANSPORT METHOD [J].

RATCHEVA.TM ;

DRAGIEVA, ID ;

DJOGLEY, DH ;

TCHISTYAKOV, YD ;

KRASULIN, GA .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 21 (02) :703-710

[7]

ROBINSON PH, 1963, RCA REV, V24, P574

[8] EPITAXIAL-GROWTH OF CDTE BY A CLOSE-SPACED TECHNIQUE [J].

SARAIE, J ;

TANAKA, T ;

AKIYAMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (11) :1758-&

[9] ELECTRON AFFINITY OF SEMICONDUCTING COMPOUND CDSE [J].

SUZUKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (12) :1253-&

[10] SURFACE PROPERTIES OF 2-6 COMPOUNDS [J].

SWANK, RK .

PHYSICAL REVIEW, 1967, 153 (03) :844-+

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