Acceptor and donor neutralization by hydrogen in bulk 6H-SiC

被引：1

作者：

Clerjaud, B

Gendron, F

Porte, C

Wilkening, W

机构：

来源：

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷

关键词：

hydrogen; SiC; neutralization;

D O I：

10.4028/www.scientific.net/MSF.196-201.837

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A high temperature hydrogen diffusion furnace is described; it has been used for investigating the effect of hydrogen on the shallow dopants in 6H-SiC. Accepters and donors are monitored by their electron paramagnetic resonance signals. It is shown that both accepters and donors are neutralized after hydrogenation. This hydrogenation technique allows to diffuse hydrogen over length of the order of 1 mm.

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页码：837 / 841

页数：5

相关论文

共 20 条

[1] UNINTENTIONAL HYDROGEN INCORPORATION IN CRYSTALS [J].

CLERJAUD, B .

PHYSICA B-CONDENSED MATTER, 1991, 170 (1-4) :383-391

[2] ACCEPTOR AND DONOR NEUTRALIZATION BY HYDROGEN IN 6H SIC [J].

CLERJAUD, B ;

GENDRON, F ;

PORTE, C ;

WILKENING, W .

SOLID STATE COMMUNICATIONS, 1995, 93 (05) :463-464

[3]

GENDRON F, IN PRESS APPL PHYS L

[4]

Gorelkinskii Yu. V., 1987, Soviet Technical Physics Letters, V13, P45

[5]

HOHNE M, 1994, MATER SCI FORUM, V143-, P1659, DOI 10.4028/www.scientific.net/MSF.143-147.1659

[6]

KONSTANTINOV AO, 1994, SEMICONDUCTORS+, V28, P209

[7] HYDROGEN INCORPORATION IN BORON-DOPED 6H-SIC CVD EPILAYERS PRODUCED USING SITE-COMPETITION EPITAXY [J].

LARKIN, DJ ;

SRIDHARA, SG ;

DEVATY, RP ;

CHOYKE, WJ .

JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (04) :289-294

[8] CONCENTRATION OF ATOMIC-HYDROGEN DIFFUSED INTO SILICON IN THE TEMPERATURE-RANGE 900-1300-DEGREES-C [J].

MCQUAID, SA ;

NEWMAN, RC ;

TUCKER, JH ;

LIGHTOWLERS, EC ;

KUBIAK, RAA ;

GOULDING, M .

APPLIED PHYSICS LETTERS, 1991, 58 (25) :2933-2935

[9]

Pankove J, 1991, SEMICONDUCTORS SEMIM, V34

[10]

Pearton S. J., 1994, Materials Science Forum, V148-149, P113, DOI 10.4028/www.scientific.net/MSF.148-149.113