TRANSVERSE-MODE BEHAVIOR IN NATIVE-OXIDE-DEFINED LOW-THRESHOLD VERTICAL-CAVITY LASERS

被引：42

作者：

HUFFAKER, DL ^{[1
]}

DEPPE, DG ^{[1
]}

ROGERS, TJ ^{[1
]}

机构：

[1] MARTIN MARIETTA CORP,SYRACUSE,NY 13121

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 13期

关键词：

D O I：

10.1063/1.112927

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented characterizing the transverse mode behavior of AlAs/GaAs/InGaAs vertical-cavity surface-emitting lasers fabricated using a native-oxide process. The native-oxide process results in laser diodes with active regions defined to be 10, 8, and 4 mu m squares. We show that the transverse lasing mode is influenced by mirror reflectivity, with significant mode changes occurring with drive current for 8-10 mu m devices in the ranges of one to four times threshold. In smaller devices of 4 mu m square dimension, the transverse mode at threshold appears as a lowest order mode.

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页码：1611 / 1613

页数：3

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