TRANSVERSE-MODE BEHAVIOR IN NATIVE-OXIDE-DEFINED LOW-THRESHOLD VERTICAL-CAVITY LASERS

被引:42
作者
HUFFAKER, DL [1 ]
DEPPE, DG [1 ]
ROGERS, TJ [1 ]
机构
[1] MARTIN MARIETTA CORP,SYRACUSE,NY 13121
关键词
D O I
10.1063/1.112927
中图分类号
O59 [应用物理学];
学科分类号
摘要
Data are presented characterizing the transverse mode behavior of AlAs/GaAs/InGaAs vertical-cavity surface-emitting lasers fabricated using a native-oxide process. The native-oxide process results in laser diodes with active regions defined to be 10, 8, and 4 mu m squares. We show that the transverse lasing mode is influenced by mirror reflectivity, with significant mode changes occurring with drive current for 8-10 mu m devices in the ranges of one to four times threshold. In smaller devices of 4 mu m square dimension, the transverse mode at threshold appears as a lowest order mode.
引用
收藏
页码:1611 / 1613
页数:3
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