MO-CVD EPITAXY OF INP MATERIALS, GAAS, AND OF THE GAINAS/INP HETEROSTRUCTURE

被引：0
作者：
DIFORTEPOISSON, MA
BRYLINSKI, C
DIPERSIO, J
DUCHEMIN, JP
机构：
来源：
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 1986年 / 41卷 / 231期
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中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
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页码：221 / 222
页数：2
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