AMORPHOUS GES3-AIII THIN-FILMS AS INORGANIC PHOTORESISTS

The kinetics of the selective solubility of amorphous films from the Ge-S-A**I**I**I (where A represents gallium or indium) systems were investigated, especially compositions along the GeS//3 -A**I**I**I diagonals. A negative effect of photostimulated selective dissolution for compositions with either gallium or indium was observed. After annealing, a change from a negative to a positive effect, accompanied by an improvement in the parameters characterizing the selective solubility of the films, was found. The irradiation temperature is also of importance in obtaining a more pronounced dissolution effect. The optimum parameters were shown by films of Ge//2//3S//6//7Ga//1//0 and Ge//2//3S//6//7In//1//0.