50 NM ULTRA-THIN BASE SILICON BIPOLAR DEVICE FABRICATION BASED ON PHOTO EPITAXIAL-GROWTH

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作者：
SUZUKI, K
FUKANO, T
ISHIWARI, H
YAMAZAKI, T
TAGUCHI, M
ITO, T
ISHIKAWA, H
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1989 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS | 1989年
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：91 / 92
页数：2
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