ANOMALOUS HEAT-CONDUCTION OF ION-IMPLANTED AMORPHOUS LAYERS IN SILICON-CRYSTALS USING A LASER-PROBE TECHNIQUE

被引:8
作者
GOLDSMID, HJ
HORA, H
PAUL, GL
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 81卷 / 02期
关键词
D O I
10.1002/pssa.2210810248
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:K127 / K130
页数:4
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共 12 条
[11]   ELECTRICAL ACTIVATION OF IMPLANTED ARSENIC IN SILICON DURING LOW-TEMPERATURE ANNEAL [J].
NISHI, H ;
SAKURAI, T ;
FURUYA, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :461-466
[12]   EPITAXIAL ALIGNMENT OF POLYCRYSTALLINE SI FILMS ON (100) SI [J].
TSAUR, BY ;
HUNG, LS .
APPLIED PHYSICS LETTERS, 1980, 37 (07) :648-651