BOMBARDMENT-INDUCED LIGHT-EMISSION SPECTROSCOPY OF GAAS

被引：17

作者：

GHOSE, D

机构：

[1] Saha Inst of Nuclear Physics, Calcutta, India

来源：

VACUUM | 1995年 / 46卷 / 01期

关键词：

D O I：

10.1016/0042-207X(95)80052-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gal spectral lines originating from the sputtering of GaAs under 6-10 keV Ar+ ion bombardment have been studied. Results of the measurements on the target position, beam current and projectile energy dependences of 4172, 4033 and 2944 Angstrom lines are presented. It is found that the secondary photon emission yields can be well described by the model proposed by Wright and Gruen.

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页码：13 / 16

页数：4

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