CHARGE QUANTIZATION EFFECTS IN NETWORKS OF SMALL CAPACITANCE TUNNEL-JUNCTIONS

被引:3
|
作者
MOOIJ, JE
GEERLIGS, LJ
机构
[1] Department of Applied Physics, Delft University of Technology, Delft
来源
PHYSICA B | 1991年 / 169卷 / 1-4期
关键词
D O I
10.1016/0921-4526(91)90204-R
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Effects of charge quantization have been studied in tunnel junctions with small capacitance. In the normal state the Coulomb blockade, the modulation of conductance by a gate voltage and tunneling across multiple junctions through virtual states are observed. A 'turnstile' device has been developed that transmits exactly one electron in each cycle of an AC-gate voltage. In 2D arrays a charge-anticharge pair unbinding transition is discussed. In arrays of superconducting junctions a phase transition occurs at zero temperature between insulating behavior for high-resistance junctions and superconducting behavior for junction resistances below 14 k-OMEGA.
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页码:32 / 36
页数:5
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